Growth and band gap of strained 〈110〉 Si1−xGex layers on silicon substrates by chemical vapor deposition
- 4 July 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (1) , 76-78
- https://doi.org/10.1063/1.113079
Abstract
We report chemical vapor deposition growth of strained Si1−xGex alloy layers on 〈110〉 Si substrates. Compared to the same growth conditions on 〈100〉 substrates, a slightly lower Ge composition and a much lower growth rate was observed. From photoluminescence measurements, the band gap of these films for 0.16≤x≤0.43 is evaluated and compared to theory. Finally, a surprisingly large ‘‘no-phonon’’ replica line strength ratio was observed as compared with that observed in 〈100〉 layers.Keywords
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