Determination of the frequency-dependent resistivity of ultrathin metallic films on Si(111)
- 15 February 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (4) , 1856-1862
- https://doi.org/10.1103/physrevb.31.1856
Abstract
Inelastic electron scattering is used to determine the frequency-dependent resistivity of ultrathin metallic films on Si(111). The experimental data are analyzed in the single-scattering regime using dipole scattering theory. An unusual frequency dependence of the resistivity is found for low coverages of Pd on Si(111) and analyzed using the Bruggeman effective-medium theory. This analysis together with hydrogen-titration studies indicates the presence of metallic clusters embedded in the surface. We also show that electron tunneling via surface states gives an important contribution to the dc conductivity of these ultrathin granular metal films on Si(111).Keywords
This publication has 23 references indexed in Scilit:
- Inelastic scattering of slow electrons from Si(111) surfacesPhysical Review B, 1984
- The function of metals in metal-compounded semiconductor photocatalystsChemical Physics Letters, 1984
- Electron energy losses from thin silver filmsSolid State Communications, 1983
- NiSi2-Si infrared Schottky photodetectors grown by molecular beam epitaxyApplied Physics Letters, 1982
- Reduction in the effective barrier height in PtSi-p-Si Schottky diodes by using low energy ion implantationThin Solid Films, 1982
- Palladium-silicide Schottky-barrier IR-CCD for SWIR applications at intermediate temperaturesIEEE Electron Device Letters, 1982
- Thin film interaction between titanium and polycrystalline siliconJournal of Applied Physics, 1980
- 1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspectiveIEEE Transactions on Electron Devices, 1979
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979
- Metallurgical properties and electrical characteristics of palladium silicide-silicon contactsSolid-State Electronics, 1971