A monolithically-integrated optical transmitter and receiver in a zero-change 45nm SOI process
- 1 June 2014
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 21585601,p. 1-2
- https://doi.org/10.1109/vlsic.2014.6858378
Abstract
An optical transmitter and receiver with monolithically-integrated photonic devices and circuits are demonstrated together for the first time in a commercial 45nm SOI process, without any process changes. The transmitter features an interleaved-junction carrier-depletion ring modulator and operates at 3.5Gb/s with an 8dB extinction ratio and combined circuit and device energy cost of 70fJ/bit. The optical receiver connects to an integrated SiGe detector designed for 1180nm wavelength and performs at 2.5Gb/s with 15μA sensitivity and energy cost of 220fJ/bit.Keywords
This publication has 4 references indexed in Scilit:
- Depletion-mode carrier-plasma optical modulator in zero-change advanced CMOSOptics Letters, 2013
- Monolithically Integrated Silicon Nanophotonics Receiver in 90nm CMOS Technology NodePublished by Optica Publishing Group ,2013
- 2-pJ/bit (On-Chip) 10-Gb/s Digital CMOS Silicon Photonic LinkIEEE Photonics Technology Letters, 2012
- A Monolithic 25-Gb/s Transceiver With Photonic Ring Modulators and Ge Detectors in a 130-nm CMOS SOI ProcessIEEE Journal of Solid-State Circuits, 2012