A Monolithic 25-Gb/s Transceiver With Photonic Ring Modulators and Ge Detectors in a 130-nm CMOS SOI Process
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- 12 April 2012
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 47 (6) , 1309-1322
- https://doi.org/10.1109/jssc.2012.2189835
Abstract
A fully-integrated, silicon photonic transceiver is demonstrated in a silicon-on-insulator process using photonic microring resonator modulators for low power consumption. The trade-offs between bandwidth and extinction ratio are discussed and motivate the use of transmit pre-emphasis for ring modulators to increase the interconnect data rate. The transmitter and receiver is demonstrated to data rates of 25 Gb/s with a BER of 10 ^-12. The total power consumption of the transceiver is 256 mW and demonstrates a link efficiency of 10.2 pJ/bit excluding laser power. At 25 Gb/s, the driver operates at 7.2 pJ/bit.Keywords
This publication has 33 references indexed in Scilit:
- Optical I/O Technology for Tera-Scale ComputingIEEE Journal of Solid-State Circuits, 2009
- Low V_pp, ultralow-energy, compact, high-speed silicon electro-optic modulatorOptics Express, 2009
- High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diodeOptics Express, 2009
- Ge-on-SOI-Detector/Si-CMOS-Amplifier Receivers for High-Performance Optical-Communication ApplicationsJournal of Lightwave Technology, 2007
- A Fully Integrated 20-Gb/s Optoelectronic Transceiver Implemented in a Standard 0.13-$\mu{\hbox {m}}$ CMOS SOI TechnologyIEEE Journal of Solid-State Circuits, 2006
- A 100-mW 4/spl times/10 Gb/s transceiver in 80-nm CMOS for high-density optical interconnectsIEEE Journal of Solid-State Circuits, 2005
- Guiding, modulating, and emitting light on Silicon-challenges and opportunitiesJournal of Lightwave Technology, 2005
- Broadband Circuits for Optical Fiber CommunicationPublished by Wiley ,2005
- Terabus: a chip-to-chip parallel optical interconnectPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- On the choice of optimum FET size in wide-band transimpedance amplifiersJournal of Lightwave Technology, 1988