Study of gain in determining T/sub 0/ of 1.3 μm semiconductor lasers
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasersIEEE Journal of Quantum Electronics, 1993
- Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasersIEEE Journal of Quantum Electronics, 1993
- TE and TM optical gains in AlGaAs/GaAs single-quantum-well lasersSemiconductor Science and Technology, 1993
- Novel technique for determining internal loss of individual semiconductor lasersElectronics Letters, 1992
- Measurement of radiative, Auger, and nonradiative currents in 1.3-μm InGaAsP buried heterostructure lasersApplied Physics Letters, 1987
- Technique for measurement of the gain spectra of semiconductor diode lasersJournal of Applied Physics, 1984
- Analysis of radiative and nonradiative recombination law in lightly doped InGaAsP lasersElectronics Letters, 1983