Rapid thermally processed ferroelectric Bi4Ti3O12 thin films
- 1 December 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (11) , 5517-5519
- https://doi.org/10.1063/1.351949
Abstract
Polycrystalline Bi4Ti3O12 thin films having perovskite structure were successfully produced on platinum coated silicon substrates by the sol-gel technique. Crack-free and crystalline films of 5000 Å thickness were fabricated by spinning and post-deposition rapid thermal annealing treatment at 500 °C for 20 s. The films exhibited good structural, dielectric, and ferroelectric properties. The measured dielectric constant and loss factor at a frequency of 100 kHz were 180 and 0.014 and remanent polarization and coercive field were 5.4 μC/cm2 and 135 kV/cm, respectively. The films showed good switching endurance under bipolar stressing at least up to 1010 cycles.This publication has 10 references indexed in Scilit:
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