Temperature-Dependent Reaction of rf Hydrogen Plasma with Silicon

Publisher Website
Google Scholar
Abstract
The reaction of rf hydrogen plasma with silicon has been studied by characterizing the reaction products as a function of silicon target temperature (80–300° C), hydrogen gas pressure (20–200 Pa) and rf power (50–400 W). It was found that the reaction rate of rf hydrogen plasma with silicon increased at temperatures below 200° C. Major products in the reaction are SiH2 and SiH3 species, and their sputtering rates depend strongly on the silicon target temperature rather than plasma density under the present sputtering conditions. The temperature dependence can be explained in terms of the chemical reaction rate of hydrogen with silicon and the surface density of adsorbed hydrogen on the silicon surface. The plasma bombardment effects on the reaction rate and the desorption rate of adsorbed hydrogen are also discussed.