Characterization of µc-Si:H Films Prepared by H2 Sputtering
- 1 March 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (3A) , L385
- https://doi.org/10.1143/jjap.29.l385
Abstract
Hydrogenated microcrystalline Si films were prepared on fused quartz and Si substrates by H2 sputtering of a Si target. The grain size increases with the increasing electrical power required for the sputtering, P s, where the smallest grain size is estimated to be 1.1 nm of the Si and 7.1 nm on the quartz. It is also discovered that Raman spectra change with P s but in a different manner on the Si and the quartz substrates. A reason for this difference is discussed.Keywords
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