Computer simulations of liquid phase epitaxy of III-V ternary alloys
- 1 May 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 33 (2) , 215-222
- https://doi.org/10.1016/0022-0248(76)90046-4
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Liquid phase epitaxial growth of six-layer GaAs/(GaAl)As structures for injection lasers with 0.04 μm thick centre layerJournal of Crystal Growth, 1974
- Phase equilibria in III–V quaternary systems—application to Al-Ga-P-AsJournal of Physics and Chemistry of Solids, 1974
- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
- The application of numerical methods to simulate the liquid phase epitaxial growth of Ga1 −xAlxAs from an unstirred solutionJournal of Crystal Growth, 1972
- Computer simulations of liquid phase epitaxy of GaAs in Ga solutionJournal of Crystal Growth, 1971
- Constitutional supercooling in GaAs liquid phase epitaxyJournal of Crystal Growth, 1970
- Ga-Al-As: Phase, thermodynamic and optical propertiesJournal of Physics and Chemistry of Solids, 1969
- A study of solute diffusion in liquid tinActa Metallurgica, 1960