X-Ray Photoelectron and Electron Energy Loss Studies of Si-SiO2 System: Angular Variation

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Abstract
X-ray photoelectron and electron energy loss spectroscopies (XPS and ELS) were performed on silicon with a top oxide layer (\lesssim60 Å) using Mg-Kα radiation and primary electrons with energies of 0.3 to 1.8 keV. The comparison of the experimental results with phenomenological calculations, which contained an assumption that Si-SiO2 couples had a layer structure with an abrupt interface, indicated a good agreement between exprimental and calculated values. Some difference was observed in the polar-angle dependence of XPS and ELS spectra measured using a cylindrical mirror analyzer. This was interpreted as the difference in attenuation length between incident particles, i.e. photons (XPS) and electrons (ELS).