GaAs-based, 1.55 µm high speed, high saturationpower, low-temperaturegrown GaAs pin photodetector
- 11 June 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (12) , 1253-1255
- https://doi.org/10.1049/el:19980852
Abstract
A novel 1.55 µm high speed (> 20 GHz) and high saturation power (> 10 mW) pin photodetector grown on a GaAs substrate is reported. By utilising low-temperature grown GaAs, the photodetectors can detect 1.55 µm light with high bandwidth owing to the short carrier trapping time.Keywords
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