An improved LPE apparatus for the growth of GaSb and GaAlSb epitaxial layers for infrared photodiodes
- 24 July 1984
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 67 (2) , 393-396
- https://doi.org/10.1016/0022-0248(84)90203-3
Abstract
No abstract availableKeywords
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- Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μmApplied Physics Letters, 1980
- AlGaAsSb Photodiodes Lattice-Matched to GaSbJapanese Journal of Applied Physics, 1979