Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μm
- 15 January 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (2) , 165-167
- https://doi.org/10.1063/1.91417
Abstract
In this letter very high quantum efficiency GaSb mesa photodiodes with AlxGa1−xSb windows are reported for the first time. External quantum efficiencies (ηext) of ≃60% at zero bias and of ≃70% at −1 V near 1.3 μm have been obtained without antireflection coatings. More than 80% of the devices from several wafers exhibited ηext⩾50% at λ≃1.3 μm.Keywords
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