Effect of subband splitting on Si inversion layers
- 1 January 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 113 (1-3) , 153-160
- https://doi.org/10.1016/0039-6028(82)90578-7
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Effect of biaxial stress on Si(100) inversion layersSurface Science, 1980
- Pressure dependence of structure in the mobility of (100) silicon inversion layersSurface Science, 1978
- Stress Effects on Electronic Properties of Silicon Inversion LayersJournal of the Physics Society Japan, 1978
- Surface quantum oscillations in (100) inversion layers under uniaxial stressSolid State Communications, 1976
- Influence of uniaxial stress on quantum effects in Si inversion layersSurface Science, 1976
- Observation of Higher Sub-band in-Type (100) Si Inversion LayersPhysical Review Letters, 1975
- Substrate Bias Effects on Electron Mobility in Silicon Inversion Layers at Low TemperaturesPhysical Review Letters, 1975
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Negative Field-Effect Mobility on (100) Si SurfacesPhysical Review Letters, 1966
- Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and GermaniumPhysical Review B, 1966