Epitaxial lift-off and its applications
- 2 June 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (6) , 1124-1135
- https://doi.org/10.1088/0268-1242/8/6/021
Abstract
In this paper the authors will give an overview of the epitaxial lift-off (ELO) technique and its applications. This first part will describe the basic technology, which includes chemical lift-off, handling bonding, stress, alignment, etc. The second part will give an overview of device results obtained with ELO (LED and lasers on Si, MESFETs on InP, OEICs etc).Keywords
This publication has 25 references indexed in Scilit:
- Stable cw operation at room temperature of a 1.5-μm wavelength multiple quantum well laser on a Si substrateApplied Physics Letters, 1992
- Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bondApplied Physics Letters, 1991
- GaAs-based diode lasers on Si with increased lifetime obtained by using strained InGaAs active layerApplied Physics Letters, 1991
- Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substratesApplied Physics Letters, 1991
- Grafted semiconductor optoelectronicsIEEE Journal of Quantum Electronics, 1991
- Fabrication of a GaAs-AlGaAs GRIN-SCH SQW laser diode on silicon by epitaxial lift-offIEEE Photonics Technology Letters, 1991
- Relaxed lattice-mismatched growth of III–V semiconductorsProgress in Crystal Growth and Characterization of Materials, 1991
- Silicon‐On‐Insulator by Wafer Bonding: A ReviewJournal of the Electrochemical Society, 1991
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987
- High efficiency GaAs thin film solar cells by peeled film technologyJournal of Crystal Growth, 1978