Band gap opening and charge modulation in AlGaAs lateral structures obtained by organized epitaxy
- 1 January 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 40 (1-8) , 271-273
- https://doi.org/10.1016/0038-1101(95)00263-4
Abstract
No abstract availableKeywords
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