35-GHz HEMT amplifiers fabricated using integrated HEMT-HBT material grown by selective MBE
- 1 November 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 4 (11) , 361-363
- https://doi.org/10.1109/75.329706
Abstract
We have fabricated 35-GHz balanced low-noise amplifiers using pseudomorphic InGaAs-GaAs HEMT material monolithically integrated with HBT material grown by selective MBE. The 0.2-/spl mu/m T-gate HEMT amplifiers fabricated using a merged HEMT-HBT process have equivalent gain and noise figure compared to amplifiers fabricated using normal MBE and our baseline HEMT-only process. This demonstration of high performance HEMT amplifiers using integrated HEMT-HBT material and a merged HEMT-HBT process enables the fabrication of a new class of multifunction monolithic microwave integrated circuits.Keywords
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