Buffer layer strain transfer in AlN/GaN near critical thickness
- 15 April 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (8) , 4040-4044
- https://doi.org/10.1063/1.370308
Abstract
X-ray diffraction has been employed to investigate the strain relaxation of both components of a GaN/AlN bilayer on sapphire (0001) as a function of the GaN layer thickness. Below a critical thickness, GaN and AlN both relax with the same in-plane lattice constant, consistent with the energy minimum condition of elasticity theory for a bilayer. Above the critical thickness, however, the strain relaxations in the two layers were different. We can fit this strain relaxation behavior with a free standing bilayer model with an additional term describing the interaction of dislocations.This publication has 9 references indexed in Scilit:
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