Strain transfer between thin films on buried oxide and its application in heteroepitaxial crystal growth
- 1 October 1995
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 72 (4) , 231-237
- https://doi.org/10.1080/09500839508242456
Abstract
A strain transfer process between two epitaxial thin films with different lattice constants will be discussed. It is demonstrated that an epitaxial film (epifilm) grown on top of a thin buffer layer may release the strain to the buffer layer, leaving the epifilm dislocation free. A criterion to achieve this strain transfer is also derived. The strain transfer model can explain recent experiments on the growth of low dislocation relaxed SiGe material on Si. For GaAs-based materials we propose a scheme to form a thin buffer by GaAs situated on top of a buried oxide such as Al2O3 through wet oxidation of AlAs. This GaAs thin buffer provides a flexible substrate for the growth of epifilms with thicknesses not limited by conventional critical thickness for strained layers. Detailed numerical analysis on the growth of InxGa1−x As on GaAs is also performed.Keywords
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