Molecular beam epitaxy of Zn(Se,Te) alloys and superlattices
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 762-766
- https://doi.org/10.1016/0022-0248(91)91077-n
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Effects of strain on the optical and vibrational properties of ZnSe-ZnSxSe1-x strained-layer superlatticesJournal of Luminescence, 1990
- Planar doping with gallium of molecular beam epitaxial ZnSeApplied Physics Letters, 1988
- Growth of a ZnSe-ZnTe strained-layer superlattice on an InP substrate by molecular beam epitaxyApplied Physics Letters, 1986
- Molecular beam epitaxy of ZnSexTe1−x (0 ≲ x ≲ 1)Journal of Crystal Growth, 1978
- Reflectivity ofSingle CrystalsPhysical Review B, 1972
- SYNTHESIS AND TRANSPORT PROPERTIES OF ZnSe-ZnTe MIXED CRYSTALS IN n- AND p-TYPE FORMApplied Physics Letters, 1964
- Mass spectrometric and Knudsen-cell vaporization studies of group 2B-6B compoundsTransactions of the Faraday Society, 1963
- Vapor-Phase Growth of Single Crystals of II–VI CompoundsJournal of Applied Physics, 1961
- Anomalous Variation of Band Gap with Composition in Zinc Sulfo- and Seleno-TelluridesPhysical Review B, 1957