Temperature dependence of the direct band gap energy and donor–acceptor transition energies in Be-doped GaAsSb lattice matched to InP
- 7 November 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (19) , 2442-2444
- https://doi.org/10.1063/1.112701
Abstract
The direct band energy (Eg) and donor–acceptor (D,A) transition energies are mapped as a function of temperature for Be‐doped GaAsSb lattice matched to InP. Photoluminescence (PL) measurements over the temperature range 2 K≤T≤300 K yield two emission peaks, one of lower intensity and one of higher intensity. The lower intensity peak is believed to be Be related, while the higher intensity peak is from residual impurities. The emission energies of both PL peaks increase linearly with respect to the logarithm of excitation intensity, indicating the peaks are (D,A) transitions. Measurement of Eg was achieved using optical absorption spectroscopy over the range 14 K≤T≤300 K. A least squares fit of the absorption data using the Varshni equation produces a closed form expression for Eg(T) with coefficients α=13.5×10−4 eV/K, and β=135 K.Keywords
This publication has 10 references indexed in Scilit:
- Moving photoluminescence bands in GaAs1−xSbx layers grown by molecular beam epitaxy on InP substratesJournal of Applied Physics, 1994
- Photoluminescence of AlxGa1−xAs alloysJournal of Applied Physics, 1994
- GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As p-channel heterostructure FETs with high transconductance and low gate leakage currentIEEE Electron Device Letters, 1993
- Band Edge Optical Absorption of Molecular Beam Epitaxial GaSb Grown on Semi-Insulating GaAs SubstrateMRS Proceedings, 1993
- High gain AllnAs/GaAsSb/AllnAs NpN HBTs on InPJournal of Electronic Materials, 1992
- Optical properties of molecular beam epitaxially grown GaAs1−xSbx (0<x<0.5) on GaAs and InP substratesJournal of Applied Physics, 1988
- Optical Characterization Of GaAs1-xSbx And GaAs1-xSbx/GaAs Strained Layer SuperlatticesPublished by SPIE-Intl Soc Optical Eng ,1988
- OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5Journal of Electronic Materials, 1986
- Excitation-dependent emission in Mg-, Be-, Cd-, and Zn-implanted GaAsJournal of Applied Physics, 1977
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967