Moving photoluminescence bands in GaAs1−xSbx layers grown by molecular beam epitaxy on InP substrates
- 1 July 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (1) , 504-508
- https://doi.org/10.1063/1.357102
Abstract
We report the excitation intensity dependent photoluminescence properties of GaAs1−xSbx layers grown by molecular beam epitaxy on InP substrates. Photoluminescence consists of the bound exciton and the quasi‐donor‐acceptor pair transitions for the layers in the range of 0.26≤x≤0.94. The concentration modulation produced by the relaxation of the misfit strain between the epitaxial GaAs1−xSbx layer and InP substrate is responsible for the quasi‐donor‐acceptor pair transition. A large Stokes shift between the photoluminescence transition of the bound exciton and the band gap determined by the optical absorption measurements is also consistent with our model of concentration modulation.This publication has 23 references indexed in Scilit:
- Shifting photoluminescence bands in high-resistivity Li-compensated GaAsPhysical Review B, 1993
- Excitation intensity dependence of photoluminescence in Ga0.52In0.48PApplied Physics Letters, 1990
- Quasi-donor-acceptor pair photoluminescence emission in GaxIn1−xAs/InPJournal of Applied Physics, 1989
- Growth and characterization of GaAs0.5Sb0.5 lattice-matched to InP by molecular beam epitaxyJournal of Crystal Growth, 1988
- Molecular beam epitaxial growth and low-temperature optical characterization of GaAs0.5Sb0.5 on InPApplied Physics Letters, 1987
- OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5Journal of Electronic Materials, 1986
- Excitation-dependent emission in Mg-, Be-, Cd-, and Zn-implanted GaAsJournal of Applied Physics, 1977
- Molecular-beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsyApplied Physics Letters, 1977
- GaAs1-xSbx(0.3<x<0.9) Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977
- Dependence of the Peak Energy of the Pair-Photoluminescence Band on Excitation IntensityPhysical Review B, 1972