Annealing behavior of Ga and Ge antisite defects in neutron-transmutation-doped semi-insulating GaAs
- 15 December 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (12) , 7315-7317
- https://doi.org/10.1063/1.349749
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- The role of Ga antisite defect in the activation process of transmuted impurities in neutron-transmutation-doped semi-insulating GaAsJournal of Applied Physics, 1990
- Photoluminescence study of the annealing behavior of transmuted impurities in neutron-transmutation-doped semi-insulating GaAsJournal of Applied Physics, 1989
- Influence of fast neutrons on electrical properties in neutron transmutation doped GaAs: New annealing stageApplied Physics Letters, 1987
- Photoluminescence in transmutation doped liquid-phase-epitaxial gallium arsenideJournal of Applied Physics, 1985
- Residual double acceptors in bulk GaAsApplied Physics Letters, 1983
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- Infrared absorption of the 78-meV acceptor in GaAsApplied Physics Letters, 1982
- Close-contact annealing of ion-implanted GaAs and InPApplied Physics Letters, 1980
- Radiative transitions induced in gallium arsenide by modest heat treatmentJournal of Applied Physics, 1980
- Luminescence due to Ge Acceptors in GaAsJournal of Applied Physics, 1968