Photoluminescence in transmutation doped liquid-phase-epitaxial gallium arsenide
- 15 March 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (6) , 2186-2190
- https://doi.org/10.1063/1.334360
Abstract
Photoluminescence and Hall-effect measurements on neutron transmutation doped liquid-phase-epitaxial GaAs layers were performed. The obtained results clearly point out that at least a part of the Ge atoms introduced by transmutation of Ga leave their original lattice site behaving as acceptors. The probable cause of these displacements are the recoils during γ and β emissions from the unstable Ga isotopes.This publication has 16 references indexed in Scilit:
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