Neutron transmutation doping of gallium phosphide
- 15 January 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (2) , 353-357
- https://doi.org/10.1063/1.333079
Abstract
The doping of GaP with Ge using nuclear transmutation is reported. Electrical and optical measurements were used to characterize the neutron‐irradiated samples. After annealing at 800 °C for 2 h, essentially all the Ge atoms are located on lattice sites where they act as single donors. This is most likely the Ga site. Higher temperatures are needed to anneal all the defects induced during irradiation and decay of the activated nuclei.This publication has 8 references indexed in Scilit:
- Electrical properties of neutron-transmutation-doped GaAs below 450 KPhysical Review B, 1982
- Point Defects in GaP, GaAs, and InPPublished by Elsevier ,1982
- Doping of semi-insulating and n-type GaAs by neutron transmutationJournal of Applied Physics, 1980
- Magneto-optical study of shallow donors in transmutation-doped GaAsJournal of Physics and Chemistry of Solids, 1978
- Systematic Control of Doping Characteristics of n-InSb by Nuclear ReactionsPhysica Status Solidi (a), 1974
- Heat treatment of gallium phosphideSolid State Communications, 1974
- Preparation of Homogeneous n-Type InSb by Thermal-Neutron IrradiationJournal of Applied Physics, 1967
- Optical absorption in n-type gallium phosphideJournal of Physics and Chemistry of Solids, 1959