Two-step preparation of 6H–SiC(0001) surface for epitaxial growth of GaN thin film
- 21 April 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (17) , 2468-2470
- https://doi.org/10.1063/1.123883
Abstract
A scratch-free and atomically flat 6H–SiC(0001) surface has been successfully prepared by a two-step method which combines atmospheric hydrogen treatment and ultrahigh vacuum Si etching. On this surface, a high-quality GaN(0001) thin film is obtained by radio frequency nitrogen plasma assisted molecular beam epitaxy. Its surface exhibits a typical terrace-plus-step morphology, which enables us to study various GaN(0001) surface superstructures and hollow-core defects with atomic resolution by scanning tunneling microscopy.Keywords
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