X-ray Characterisation of a V90S Sige MBE System
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- X-ray diffraction characterization of Sb delta doping in SiJournal of Physics D: Applied Physics, 1990
- Estimation of percentage relaxation in Si/Si1-xGexstrained-layer superlatticesSemiconductor Science and Technology, 1989
- Interface roughness and period variations in MQW structures determined by X-ray diffractionJournal of Applied Crystallography, 1988
- Composition and lattice-mismatch measurement of thin semiconductor layers by x-ray diffractionJournal of Applied Physics, 1987
- Physics and applications of GexSi1-x/Si strained-layer heterostructuresIEEE Journal of Quantum Electronics, 1986