Optically detected magnetic resonance study of the transition from pseudodirect type-II to type-I GaAs/AlAs superlattices
- 30 June 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (4) , 911-914
- https://doi.org/10.1016/0038-1101(94)90324-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Optically detected magnetic resonance of excitons and carriers in pseudodirect GaAs/AlAs superlatticesSolid State Communications, 1993
- Optically detected magnetic resonance of excitons and carriers in
GaAs AlAs Superlattices and Microstructures, 1992 - Fine structure of heavy excitons in GaAs/AlAs superlatticesPhysical Review B, 1992
- ODMR study of recombination processes in ionic crystals and silicon carbideApplied Magnetic Resonance, 1991
- Fine structure of excitons in type-II GaAs/AlAs quantum wellsPhysical Review B, 1990
- Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductorsAdvances in Physics, 1981