AlGaAs/InGaAs/GaAs single electron transistors fabricated by Ga focused ion beam implantation
- 25 April 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (17) , 2250-2252
- https://doi.org/10.1063/1.111634
Abstract
Single electron transistors are formed in an AlGaAs/InGaAs/GaAs modulation-doped heterostructure by Ga focused ion beam implantation. The AlGaAs/InGaAs/GaAs system has a high two-dimensional electron gas density and facilitates a lateral constriction whose depletion length is much smaller than that in a conventional AlGaAs/GaAs system. A dot structure confined by a small depletion spreading of less than 0.15 μm is formed by the ion implantation. This ion implantation is also employed to form in-plane gates for controlling the tunneling junctions between the dot and reservoirs, and the number of electrons in the dot. Coulomb oscillations and a Coulomb staircase have been clearly observed by controlling three in-plane gates.Keywords
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