Etching Rate Control by MeV O+ Implantation for Laser-Chemical Reaction of Ferrite
- 1 October 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (10R)
- https://doi.org/10.1143/jjap.29.2260
Abstract
The control of etching rate in laser-induced chemical reaction of Mn–Zn ferrite in H3PO4 solution by MeV O+ implantation has been investigated. The etching induced by Ar+-ion laser irradiation in a H3PO4 solution was suppressed by implantating 3 MeV O+ to a dose of 1×1017 cm-2 when the laser power was low. The etching suppression disappeared when the O+-implanted sample was thermally annealed at 850°C for 30 min. The suppression is found to be related to the crystallinity change induced by ion implantation instead of surface reflectivity change.Keywords
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