Thermochemical dry etching of single crystal ferrite by laser irradiation in CCl4 gas atmosphere

This publication has 11 references indexed in Scilit:

• Laser-induced thermochemical maskless-etching of III?V compound semiconductors in chloride gas atmosphere
  Applied Physics A, 1988
• Stoichiometric Change in Gallium Arsenide after Laser-Induced Thermochemical Etching
  Japanese Journal of Applied Physics, 1987
• Rapid direct writing of high-aspect-ratio trenches in silicon
  Applied Physics Letters, 1987
• Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etching in CCl₄ Atmosphere
  Japanese Journal of Applied Physics, 1985
• Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl₄ Atmosphere
  Japanese Journal of Applied Physics, 1985
• Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl₄ Gas Atmosphere
  Japanese Journal of Applied Physics, 1984
• Maskless Dry Etching of GaAs by Focused Laser Beam
  Published by Springer Nature ,1984
• Laser Induced Local Etching of Gallium Arsenide in Gas Atmosphere
  Japanese Journal of Applied Physics, 1983
• Laser enhanced etching in KOH
  Applied Physics Letters, 1982
• CW CO2-laser annealing of arsenic implanted silicon
  Applied Physics A, 1980