Laser-induced thermochemical maskless-etching of III?V compound semiconductors in chloride gas atmosphere
- 1 April 1988
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 45 (4) , 305-312
- https://doi.org/10.1007/bf00617936
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Laser-induced etching of gallium arsenide in a CCl_4 atmosphere: control of carbon depositionJournal of the Optical Society of America B, 1987
- Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl4 AtmosphereJapanese Journal of Applied Physics, 1985
- Photocarrier Generation and Transport in Polyimide Films: A Numerical AnalysisJapanese Journal of Applied Physics, 1985
- 200 kV Mass-Separated Fine Focused Ion Beam ApparatusJapanese Journal of Applied Physics, 1985
- Gallium Arsenide Layers Grown By Mbe on Germanium Islands on InsulatorMRS Proceedings, 1985
- Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion BeamsJapanese Journal of Applied Physics, 1984
- Laser Induced Local Etching of Gallium Arsenide in Gas AtmosphereJapanese Journal of Applied Physics, 1983
- Crystallographic etching of GaAs with bromine and chlorine plasmasJournal of Applied Physics, 1983
- Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion BeamJapanese Journal of Applied Physics, 1982
- Temperature Dependence of InP and GaAs Etching in a Chlorine PlasmaJournal of the Electrochemical Society, 1982