Gallium Arsenide Layers Grown By Mbe on Germanium Islands on Insulator
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Residual Strain in Single Crystalline Germanium Islands on InsulatorJapanese Journal of Applied Physics, 1984
- Thickness Dependence of SiO2 Capping Layers on Recrystallization of Germanium Islands on InsulatorJapanese Journal of Applied Physics, 1984
- Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on InsulatorJapanese Journal of Applied Physics, 1984
- Characterization of Gallium Arsenide Layers on Insulators with Germanium Interface IslandsPublished by Springer Nature ,1984
- Photogeneration of Charge Carriers in Polyimide FilmsJapanese Journal of Applied Physics, 1983
- GaAs Light Emitting Diodes Fabricated on SiO2/Si WafersJapanese Journal of Applied Physics, 1983
- Single Crystalline Germanium Island on Silicon Dioxide by Zone MeltingMRS Proceedings, 1983
- Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor depositionApplied Physics Letters, 1982
- Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowthApplied Physics Letters, 1982