Residual Strain in Single Crystalline Germanium Islands on Insulator
- 1 June 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (6A) , L363
- https://doi.org/10.1143/jjap.23.l363
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Single Crystalline Germanium Island on Insulator by Zone Melting RecrystallizationJapanese Journal of Applied Physics, 1983
- GaAs Light Emitting Diodes Fabricated on SiO2/Si WafersJapanese Journal of Applied Physics, 1983
- Characterization of ion implanted and laser annealed polycrystalline Si by a Raman microprobeApplied Physics Letters, 1982
- Raman scattering study of ion implanted and C.W.-Laser annealed polycrystalline siliconSolid State Communications, 1981
- Anomalous Residual-Stress in Pulsed-Laser-Annealed Silicon-on-Sapphire Revealed by Raman ScatteringJapanese Journal of Applied Physics, 1981
- Stress-relieved regrowth of silicon on sapphire by laser annealingApplied Physics Letters, 1980
- Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopySolid-State Electronics, 1980
- Raman study of laser annealed siliconSolid State Communications, 1979
- Effect of static uniaxial stress on the Raman spectrum of siliconSolid State Communications, 1970
- Thermal Expansion Coefficient of a Pyrolitically Deposited Silicon Nitride FilmJapanese Journal of Applied Physics, 1967