Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl4 Gas Atmosphere
- 1 November 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (11A) , L852
- https://doi.org/10.1143/jjap.23.l852
Abstract
Localized etching of GaAs using Ar ion laser beams focused down to 1.2 µm has been performed in a CCl4 atmosphere to realize a maskless dry etching process with a submicron line-width. It was found that etched line patterns with a line-width down to 0.6 µm could be obtained by laser irradiation with a power of 80 mW in a CCl4 atmosphere at a pressure or 30 Torr. Etching rates ranged from 2.2 to 6.3 µm/s, which were greater by up to 4 orders of magnitude than those of ultraviolet laser photolysis.Keywords
This publication has 6 references indexed in Scilit:
- Photon-assisted dry etching of GaAsApplied Physics Letters, 1984
- Laser Induced Local Etching of Gallium Arsenide in Gas AtmosphereJapanese Journal of Applied Physics, 1983
- Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion BeamJapanese Journal of Applied Physics, 1982
- Localized laser etching of compound semiconductors in aqueous solutionApplied Physics Letters, 1982
- Laser chemical technique for rapid direct writing of surface relief in siliconApplied Physics Letters, 1981
- Laser-induced microscopic etching of GaAs and InPApplied Physics Letters, 1980