CW CO2-laser annealing of arsenic implanted silicon
- 1 June 1980
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 22 (2) , 129-136
- https://doi.org/10.1007/bf00885995
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Annealing of phosphorus-ion-implanted silicon using a CO2 laserApplied Physics Letters, 1979
- Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiationApplied Physics Letters, 1978
- cw argon laser annealing of ion-implanted siliconApplied Physics Letters, 1978
- Arsenic diffusion in silicon melted by high-power nanosecond laser pulsingApplied Physics Letters, 1978
- Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiationApplied Physics Letters, 1978
- Physical and electrical properties of laser-annealed ion-implanted siliconApplied Physics Letters, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978
- Amorphous-polycrystal transition induced by laser pulse in self-ion implanted siliconApplied Physics A, 1977
- Investigation of laser induced diffusion and annealing processes of arsenic-implanted silicon crystalsPhysica Status Solidi (a), 1977
- Laser annealing of arsenic implanted siliconPhysics Letters A, 1977