Enhancing the thermal stability of low dielectric constant hydrogen silsesquioxane by ion implantation
- 1 November 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 332 (1-2) , 351-355
- https://doi.org/10.1016/s0040-6090(98)01036-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading CandidatesMRS Proceedings, 1996
- Thermal Stability of Fluorinated SiO2 Films: Effects of Hydration and Film-Substrate InteractionMRS Proceedings, 1996
- Methods And Needs For Low K Material ResearchMRS Proceedings, 1995