The role of lattice strain in the phase equilibria of III-V ternary and quaternary semiconductors

Abstract
Liquidus and solidus isotherms for ternary GaxIn1−xAs and AlxIn1−xAs and quaternary In1−xGaxAs1−yPy and In1−xGaxAs1−ySby alloy semiconductors have been calculated using the regular solution phase equilibria model for liquid phase epitaxial growth. The effect of lattice-mismatch strain in the growing layer has been incorporated in the model. Calculations have been made in order to make comparisons with published results of previous workers for both lattice-matched and mismatched layers. It is found that agreements are better with the inclusion of strain than with a zero-strain model.