The role of lattice strain in the phase equilibria of III-V ternary and quaternary semiconductors
- 1 September 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9) , 5090-5095
- https://doi.org/10.1063/1.332703
Abstract
Liquidus and solidus isotherms for ternary GaxIn1−xAs and AlxIn1−xAs and quaternary In1−xGaxAs1−yPy and In1−xGaxAs1−ySby alloy semiconductors have been calculated using the regular solution phase equilibria model for liquid phase epitaxial growth. The effect of lattice-mismatch strain in the growing layer has been incorporated in the model. Calculations have been made in order to make comparisons with published results of previous workers for both lattice-matched and mismatched layers. It is found that agreements are better with the inclusion of strain than with a zero-strain model.This publication has 27 references indexed in Scilit:
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