Dielectric breakdown strength in sol-gel derived PZT thick films
- 1 February 1997
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 15 (1) , 89-98
- https://doi.org/10.1080/10584589708015699
Abstract
Dielectric DC breakdown strengths of ferroelectric lead zirconate titanate (PZT) thick films are examined with respect to the film thickness, top electrode area, and grain size. The breakdown strengths of PZT(52/48) films are as much as two times higher than the predicted values empirically derived from bulk ceramics by earlier researchers. I-V characteristics show three distinct conduction mechanisms on 8 μm PZT films. Samples aged in air for one year show lower breakdown strengths, higher leakage currents, and higher onset voltages of the space-charge-limited conduction (SCLC) mechanism.Keywords
This publication has 12 references indexed in Scilit:
- Dielectric relaxation of perovskite—type oxide thin filmsIntegrated Ferroelectrics, 1995
- Dielectric, ferroelectric, and piezoelectric properties of lead zirconate titanate thick films on silicon substratesJournal of Applied Physics, 1995
- The Influence of Dopants on the Leakage Current in PZT Thin-Film Ferroelectric CapacitorsPublished by Springer Nature ,1995
- Anomalous Logarithmic Dependences in D.C. Breakdown of Ferroelectric Thin FilmsPublished by Springer Nature ,1995
- Electrical transport and dielectric breakdown in Pb(Zr,Ti)O3thin filmsFerroelectrics, 1994
- Theory of conduction and breakdown in perovskite thin filmsIntegrated Ferroelectrics, 1992
- Quantitative measurement of space-charge effects in lead zirconate-titanate memoriesJournal of Applied Physics, 1991
- Fabrication and applications of piezo-and ferroelectric filmsFerroelectrics, 1990
- Statistical Analysis of Dielectric Strength of BaTiO3 Ceramic FilmsJapanese Journal of Applied Physics, 1980
- Dielectric Breakdown of Porous CeramicsJournal of Applied Physics, 1959