Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (8) , 1232-1240
- https://doi.org/10.1109/16.2542
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- VA-6 Investigation of stress effects on the DC characteristics of GaAs MESFET's through the use of externally applied loadsIEEE Transactions on Electron Devices, 1987
- External stress effect on GaAs MESFET CharacteristicsIEEE Electron Device Letters, 1987
- Improvement in GaAs MESFET performance due to piezoelectric effectIEEE Transactions on Electron Devices, 1985
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Comparison of the orientation effect of SiO2- and Si3N4-encapsulated GaAs MESFET'sIEEE Electron Device Letters, 1985
- Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristicsIEEE Transactions on Electron Devices, 1984
- Role of the piezoelectric effect in device uniformity of GaAs integrated circuitsApplied Physics Letters, 1984
- Orientation effect reduction through capless annealing of self-aligned planar GaAs Schottky barrier field-effect transistorsApplied Physics Letters, 1983
- Photoelastic waveguides and their effect on stripe-geometry GaAs/Ga1−xAlxAs lasersJournal of Applied Physics, 1979
- Local and global smoothing of discontinuous finite element functions using a least squares methodInternational Journal for Numerical Methods in Engineering, 1974