Aluminum and Ni–silicide lateral reactions

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Abstract
The Al–Ni2Si reactions were studied in lateral diffusion couples containing Al islands on Ni–Si multiple layers. The samples were first in situ annealed in a transmission electron microscope at a temperature of 370°C for 5 min to form the Ni2Si phase in the multiple-layer area. Then they were in situ annealed at temperatures ranging from 498–545 °C. During the second-step anneal, a sequential formation of Al3Ni, Al3Ni2, and Ni3Si2 was observed. After the nucleation of the third phase (Ni3Si2), the three phases grew simultaneously with time. The lateral growth of Al3Ni and Al3Ni2 is a result of the Al diffusion and the Al–Ni silicide reactions; the lateral growth of Ni3Si2 is caused by the diffusion of Si atoms dissociated from the silicides.