Initial phase formation and dissociation in the thin-film Ni/Al system
- 1 December 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (11) , 4125-4129
- https://doi.org/10.1063/1.335542
Abstract
We have investigated the interactions of Al/Ni, Al/NiAl/Ni, Al/Ni3Al, and NiAl3/Ni thin films between 300 and 425 °C. The films were prepared by sequential evaporation and coevaporation, then vacuum annealed and analyzed by Rutherford backscattering and x-ray diffraction. The reaction always started at the interface in contact with the most Al-rich film and resulted in formation and growth of NiAl3, unless that was the most Al-rich layer. Subsequently the reaction proceeded to Ni2Al3. We conclude that the kinetics rather than the thermodynamics is responsible for determining the growth of these phases.This publication has 11 references indexed in Scilit:
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