New step impact electroluminescent devices
- 31 May 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 66 (7) , 755-759
- https://doi.org/10.1016/0038-1098(88)90999-4
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
- Observation of enhanced single longitudinal mode operation in 1.5-μm GaInAsP erbium-doped semiconductor injection lasersApplied Physics Letters, 1986
- Neodymium complexes in GaP separated by photoluminescence excitation spectroscopyJournal of Applied Physics, 1986
- Ytterbium-doped InP light-emitting diode at 1.0 μmApplied Physics Letters, 1985
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- Photoluminescence excitation spectroscopy on InP: YbPhysical Review B, 1984
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983
- Rare earth activated luminescence in InP, GaP and GaAsJournal of Crystal Growth, 1983
- Hot-Electron Impact Excitation of Tb3+ Luminescence in ZnS: Tb3+ Thin FilmsJournal of Applied Physics, 1972
- Energy Transfer from Donor–Acceptor Pairs to Deep‐Lying Impurity States in SemiconductorsPhysica Status Solidi (b), 1970
- The raising of angular momentum degeneracy of f-Electron terms by cubic crystal fieldsJournal of Physics and Chemistry of Solids, 1962