A model for the evolution of implanted oxygen profiles in silicon

This publication has 10 references indexed in Scilit:

• Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon
  Vacuum, 1984
• The Development of French New Towns: an Assessment of Progress
  Urban Studies, 1983
• Elastic and inelastic energy deposition distributions during ion implantation in solids
  Radiation Effects, 1983
• Oxidation of silicon
  Philosophical Magazine A, 1982
• Stopping power values of Be, C, Al and Si for 4He ions
  Nuclear Instruments and Methods, 1980
• TEM, AES and XPS Studies of Si Layer on Buried SiO₂ Layer Formed by High-Dose Oxygen Ion-Implantation
  Japanese Journal of Applied Physics, 1980
• Rutherford backscattering analysis of oxide layers formed by ion implantation into single-crystal silicon
  Thin Solid Films, 1978
• Calculation of the Lenz-Jensen potential using the third order approximation
  Physics Letters A, 1978
• Extrusion of quartz on ion bombardment: Further evidence for radiation-induced stress relaxation of the silica network
  Physical Review B, 1976
• Tables of stopping cross sections for 4He ions in solids
  Journal of Applied Physics, 1976