A monolithically integrated 190-GHz SiGe push-push oscillator
- 5 December 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 15 (12) , 862-864
- https://doi.org/10.1109/lmwc.2005.859996
Abstract
In this letter, we present a fully monolithically integrated G-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f/sub T/= 200GHz and a maximum frequency of oscillation fmax= 275GHz. The passive circuitry is realized by integrated transmission-line components, metal-insulator-metal (MIM)-capacitors and TaN resistors. The frequency of the output signal can be tuned between 183.3GHz and 190.5GHz, the maximum output power of the oscillator is -4.5dBm and the measured minimum single sideband phase noise is -73dBc/Hz at 1-MHz offset frequency. This represents the highest output frequency for oscillators using heterojunction bipolar transistor technology and published up to now.Keywords
This publication has 15 references indexed in Scilit:
- LC-oscillators above 100 GHz in silicon-based technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band outputPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTsIEEE Transactions on Microwave Theory and Techniques, 2003
- 104 and 134 GHz InGaP/InGaAs HBT oscillatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuitsIEEE Journal of Solid-State Circuits, 2002
- A series of InGaP/InGaAs HBT oscillators up to D-bandIEEE Transactions on Microwave Theory and Techniques, 2001
- Compact InP-based HBT VCOs with a wide tuning range at W- and D-bandIEEE Transactions on Microwave Theory and Techniques, 2000
- A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidthIEEE Journal of Solid-State Circuits, 1999
- Low-frequency noise properties of SiGe HBT's and application to ultra-low phase-noise oscillatorsIEEE Transactions on Microwave Theory and Techniques, 1998
- A 20 - 40-GHz Push - Push Dielectric Resonator OscillatorIEEE Transactions on Microwave Theory and Techniques, 1985