Design of single layer antireflection coatings for InP/In_053Ga_047As/InP photodetectors for the 1200–1600-nm wavelength range

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Abstract
Single layer antireflection coatings have been designed and fabricated for frontside illuminated InP/ In0.53Ga0.47As/InP photodetectors with normal incident light over the 1200–1600-nm wavelength range. The design treats the InP and InGaAs layers as the bottom two layers of a triple layer antireflection coating. A euating fabricated using plasma enhanced chemical vapor deposited silicon nitride demonstrated <0.5% reflected power at both 1312- and 1559-nm wavelengths simultaneously. The design method used, four antireflection coating designs, and measurement results from fabricated samples using two of the designs are presented.