Control of GaAs on Si Interface Using Atomic Layer Epitaxy
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2457
- https://doi.org/10.1143/jjap.29.l2457
Abstract
We controlled the initial stage of GaAs growth on Si by using atomic layer epitaxy (ALE) supplying source gases as a pulsed jet. The heterointerface was investigated with relection high-energy electron diffraction specially developed for vapor phase epitaxy. Auger electron spectroscopy and X-ray diffraction were also used for study. It was shown that the species of the prelayer (As, Ga, and Al) and thin ALE buffer layer (GaAs and AlAs) determines the coverage of the initial growth on Si and crystalline quality of GaAs epitaxial layers even at a thickness of 3 µm. The best results were obtained by using the AlAs buffer layer on the As prelayer deposited at 850°C.Keywords
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