Growth of GaAs and AlAs thin films by a new atomic layer epitaxy technique
- 1 July 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 174, 63-70
- https://doi.org/10.1016/0040-6090(89)90870-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPEJapanese Journal of Applied Physics, 1985
- An Examination of the Product Catalyzed Reaction of Trimethylgallium with Phosphine and the Mechanism of the Chemical Vapor Deposition of Gallium Phosphide and Gallium ArsenideJournal of the Electrochemical Society, 1977