Characterization of silicon oxide films grown at room temperature by point-to-plane corona discharge
- 1 September 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (9) , 1147-1152
- https://doi.org/10.1007/bf02817687
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Conformal Two‐Dimensional SiO2 Layers on Silicon Grown by Low Temperature Corona DischargeJournal of the Electrochemical Society, 1988
- Effects of Corona‐Discharge‐Induced Oxygen Ion Beams and Electric Fields on Silicon Oxidation Kinetics: II . Electric Field EffectsJournal of the Electrochemical Society, 1985
- Effects of Corona‐Discharge Induced Oxygen Ion Beams and Electric Fields on Silicon Oxidation Kinetics: I . Ion Beam EffectsJournal of the Electrochemical Society, 1985
- Simple approximate treatment of unipolar space-charge-dominated coronas: The Warburg law and the saturation currentJournal of Applied Physics, 1982