Thermal-anneal wavelength modification of multiple-well p-n AlxGa1−x As-GaAs quantum-well lasers
- 1 April 1984
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (7) , 2672-2675
- https://doi.org/10.1063/1.333277
Abstract
Data are presented showing that ordinary thermal annealing can be used to modify GaAs square wells into rounded AlxGa1−xAs quantum wells and shift the continuous 300‐K laser operation of a p‐n multiple‐well AlxGa1−xAs–GaAs heterostructure laser to higher energy. Transmission electron microscopy is used to show that thermal annealing at 900 °C for 10‐h changes, for example, well sizes from 85 to 105 Å and coupling barriers from 95 to 75 Å, which results in a change of laser photon energy of Δℏω∼50 meV. Bandfilling is minimal in multiple quantum‐well lasers, thus making thermal annealing a useful method to ‘‘tune’’ a continuous 300‐K quantum‐well laser to shorter wavelength as shown here. These thermal annealing experiments indicate that the Al‐Ga interdiffusion coefficient at a heterointerface is D(900)∼10−18 cm2/s.This publication has 5 references indexed in Scilit:
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